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| LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-89 package which is designed for low power surface mount applications. LDTA124EET1 3 1 2 SC-89 * Simplifies Circuit Design * Reduces Board Space * Reduces Component Count R1 R2 2 EMITTER Unit Vdc Vdc mAdc 3 COLLECTOR 1 BASE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 DEVICE MARKING AND RESISTOR VALUES Device LDTA124EET1 Marking 6B R1 (K) 22 R2 (K) 22 Shipping 3000/Tape & Reel THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR-4 Board (Note 1.) @ TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient (Note 1.) Total Device Dissipation, FR-4 Board (Note 2.) @ TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 Inch Pad Symbol PD Max 200 1.6 RJA PD 300 2.4 RJA TJ, Tstg 400 -55 to +150 mW mW/C C/W C 600 mW mW/C C/W Unit P3-1/4 LESHAN RADIO COMPANY, LTD. LDTA124EET1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Collector-Base Cutoff Current (V CB = 50 V, IE = 0) Collector-Emitter Cutoff Current (V CE = 50 V, IB = 0) Emitter-Base Cutoff Curren (VEB = 6.0 V, IC = 0 ) Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA, IE = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) Input Resistor Resistor Ratio Symbol I CBO ICEO IEBO V(BR)CBO V(BR)CEO hFE VCE(sat) VOL R1 R1/R2 Min - - - 50 50 60 - - 15.4 0.8 Typ - - - - - 100 - - 22 1.0 Max 100 500 0.2 - - - 0.25 0.2 28.6 1.2 Vdc Vdc k Unit nAdc nAdc mAdc Vdc Vdc P3-2/4 LESHAN RADIO COMPANY, LTD. LDTA124EET1 ELECTRICAL CHARACTERISTIC CURVES VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V 1 TA = -25C 25C TA = 75C 100 25C -25C 75C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 1. VCE(sat) versus IC 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 75C 10 Figure 2. DC Current Gain 25C TA = -25C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 3. Output Capacitance 100 V in, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 75C 25C Figure 4. Output Current versus Input Voltage 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 5. Input Voltage versus Output Current P3-3/4 LESHAN RADIO COMPANY, LTD. LDTA124EET1 SC-89 A -X- 3 1 2 B -Y- S K G 2 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF --- --- 10 _ --- --- 10 _ 1.50 1.60 1.70 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF --- --- 0.063 D 0.08 (0.003) M 3 PL XY M C N J -TSEATING PLANE DIM A B C D G H J K L M N S MIN 0.059 0.030 0.024 0.009 0.004 0.012 --- --- 0.059 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 _ 10 _ 0.067 H H L G RECOMMENDED PATTERN OF SOLDER PADS P3-4/4 |
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